The 2D electron gas at LaAlO3/SrTiO3 (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. Here, we investigate new means of electric field control by lateral gating the interface and modifying its electronic properties in cross-sectional samples that allow direct access to measurements of depth-resolved physical properties. Local scanning probe measurements in conjunction with electrical characterization allow us to establish field-driven reversible migration of oxygen vacancies as the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.About the presenter
Fan Ji is a PhD student working with A/Prof Jan Seidel at UNSW. Her research focuses on understanding and improving the nanoscale functionality of oxide heterostructures such as LAO/STO by means of scanning-probe based nanolithography and characterisation methods.
She also explores reversible control of the two-dimensional electron gas at oxide interfaces and its applicability to quantum devices. Her research falls with Research theme 1 and Enabling technology theme B.