I will give a brief introduction to semiconductor transistors and the way they work at low energy, including the notion of sub threshold slope and Boltzmann’s tyranny. Following on from that I will discuss the way a topological transistor is envisaged to work and how we may define a sub threshold slope for it. I will then introduce our prototype system, staggered bismuthene, and outline the role of the Rashba effect in increasing the sub threshold slope. If time permits I will discuss possible junctions with negative capacitance devices.
About the presenter
A/Prof Dimi Culcer is currently an ARC Future Fellow, he studies theoretically charge and spin transport in topological materials and artificial graphene with strong spin-orbit coupling to understand the criteria for protection against dissipation, including the operational criteria for achieving dissipationless transport in the quantum anomalous Hall effect, in Research Theme 1.